Excessive-density reminiscence arrays require selector gadgets, which allow choice of a particular reminiscence cell inside a reminiscence array by suppressing leakage present by unselected cells. Such selector gadgets will need to have extremely nonlinear present–voltage traits and wonderful endurance; thus selectors based mostly on a tunneling mechanism current benefits over these based mostly on the bodily movement of atoms or ions. Right here, we use two-dimensional (2D) supplies to construct an ultrathin (three-monolayer-thick) tunneling-based reminiscence selector. Utilizing a sandwich of h-BN, MoS2, and h-BN monolayers results in an “H-shaped” vitality barrier in the course of the heterojunction, which nonlinearly modulates the tunneling present when the exterior voltage is various. We experimentally reveal that tuning the MoS2 Fermi stage can enhance the system nonlinearity from 10 to 25. These outcomes present a basic understanding of the tunneling course of by atomically skinny 2D heterojunctions and lay the inspiration for creating excessive endurance selectors with 2D heterojunctions, doubtlessly enabling high-density non-volatile reminiscence techniques.